7 research outputs found
The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day
Get PDFEffect of BF2 + implantation on void formation in Ti-salicided narrow polysilicon lines
No full text10.1149/1.1391174Electrochemical and Solid-State Letters39442-445ESLE
Effects of high current conduction in sub-micron Ti-silicided films
No full text10.1016/S0038-1101(00)00114-3Solid-State Electronics44101837-1845SSEL
Formation of voids in Ti-salicided BF+ 2-doped submicron polysilicon lines
No full textJournal of Applied Physics87128401-8406JAPI
Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
No full textMaterials Research Society Symposium - Proceedings56491-99MRSP
X-ray photoemission spectroscopy study of silicidation of Ti on BF2 +-implanted polysilicon
No full text10.1116/1.1421565Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures1962252-2257JVTB
Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties
No full textProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA44-4923
